wpt2n31 single, pnp, -30v, -3a, power transistor with 20v n-mosfet descriptions the wpt2n31 is pnp bipolar power transistor with 20v n-mosfet. this device is suitable for use in charging circuit and other power management. standard product wpt2n31 is pb-free. features ultra low collector-to-emitter saturation voltage high dc current gain >100 3a continue collector current small package dfn2x2-6l applications charging circuit other power management in portable equipments dfn2x2-6l pin configuration (top view) 2n31 yyww 2n31 = device code yy = year ww = week marking order information device package shipping wpt2n31-6/tr dfn2x2-6l 3000/reel&tape e e c c gs 1 2 3 4 5 6 12 6 5 3 4 c d/b 1 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings thermal resistance ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% d maximum junction temperature t j =150c. parameter symbol value unit pnp transistor collector-emitter voltage v ceo -30 v collector-base voltage v cbo -30 v emitter-base voltage v ebo -6 v continues collector current a -3 a continues collector current b i c -2 a pulse collector current c i cm -6 a n-mosfet drain-source voltage v ds 20 v gate-source voltage v gs f 6 v continuous drain current a 0.80 a continuous drain current b i d 0.69 a pulsed drain current c i dm 1.4 a power dissipation and temperature power dissipation a 1.2 w power dissipation b p d 0.8 w junction temperature t j 150 c lead temperature t l 260 c operation temperature t a -40 ~ 85 c storage temperature range t stg -55 to 150 c parameter symbol value unit junction-to-ambient thermal resistance a r ja 104 c/w junction-to-ambient thermal resistance b r ja 155 c/w wpt2n31 2 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit pnp transistor collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -30 v collector-base breakdown voltage bv cbo i c =-1ma, i e =0ma -30 v emitter-base breakdown voltage bv ebo i e =-100ua, i c =0ma -6 v collector cutoff current i cbo v cb =-30v -100 na emitter cutoff current i ebo v eb =-5v -100 na collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-200ma -0.2 -0.4 v base-emitter saturation voltage v be(sat) i c =-2a, i b =-200ma -1.0 -1.5 v base-emitter forward voltage v be(on) i c =-0.5a, v ce =-2v -0.7 -1.0 v dc current gain h fe v ce =-2v,i c =-1a 100 300 n-mosfet drain-source breakdown voltage v( br ) dss v gs =0v, i d =250ua 20 v zero gate voltage drain current i dss v ds =20v, v gs =0v 1 ua gate Csource leakage current i gss v ds =0v, v gs =5v 5 ua gate threshold voltage v gs(th) v ds = v gs , i d =250ua 0.45 0.55 1.0 v v gs =4.5v, i d =0.55a 220 260 m v gs =2.5v, i d =0.45a 260 310 m v gs =1.8v, i d =0.35a 320 380 m drain-source on-resistance r ds(on) v gs =1.5v, i d =0.10a 600 1100 m input capacitance ciss 50 pf output capacitance coss 13 pf reverse transfer capacitance crss v ds =10v, v gs =0v, f=1mhz 8 pf total gate charge q g(tot) 1.15 nc threshold gate charge q g(th) 0.06 nc gate-source charge q gs 0.15 nc gate-drain charge q gd v ds =10v, v gs =4.5v, i d =0.6a 0.23 nc turn-on delay time td(on) 22 ns turn-on rise time tr 80 ns turn-off delay time td(off) 700 ns turn-off fall time tf v dd =10v, v gs =4.5v, i d =0.5a, r l =10, r g =6 650 ns body diode forward voltage v sd v gs =0v, i s =0.35a 0.5 0.7 1.0 v wpt2n31 3 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) pnp transistor output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current safe operating area 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5ma -10ma -20ma -30ma -40ma -50ma i c -collector current(ma) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitter voltage(v) ta=85 o c 1e-3 0.01 0.1 1 10 1 10 100 1000 ta=25 o c ta=-45 o c v ce(sat) -collector saturation voltage(v) i c -collector current(a) ta=85 o c 1e-3 0.01 0.1 1 10 5 50 500 5000 ta=-45 o c ta=25 o c ta=85 o c h fe -dc current gain i c -collector current(a) 10 0.01 0.1 1.0 10 100 0.1 1.0 100 s 1 ms 10 ms 100 ms 1 s dc single pulse t a = 25 c collector to emitter voltage: v ce (v) collector current: i c (a) wpt2n31 4 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
n-mosfet output characteristics on resistance vs. drain current on resistance vs. junction temperature transfer characteristics on resistance vs. gate-to-source voltage threshold voltage vs. temperature 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs =4.5v v gs =3.5v v gs =2.5v v gs =2.0v v gs =1.5v i ds -drain to source current(a) v ds -drain to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t=125 o c t=25 o c t=-50 o c i ds -drain source current(a) v gs -gate to source voltage(v) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 100 150 200 250 300 350 400 v gs =4.5v v gs =2.5v v gs =1.8v r ds(on) -on resistance(m ) i ds -drain to source current(a) 1.01.52.02.53.03.54.04.5 100 150 200 250 300 350 400 450 500 550 600 i d =0.55a r ds(on) -on resistance(m ) v gs -gate to source voltage(v) -50 -25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 v gs =4.5v,i d =0.55a r ds(on) -on resistance(m ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 i d =250ua v gs(th) -gate threshold voltage(v) temperature( o c) wpt2n31 5 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance body diode characteristics safe operation area transient thermal response (junction-to-ambient) 012345678910 0 10 20 30 40 50 60 70 80 crss coss ciss v gs =0,f=1mhz c - capacitance (pf) vds-drain to source voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t=25 o c i sd -source to drain current(a) v sd -source to drain voltage(v) t=150 o c 10 -4 10 -3 10 -2 10 -1 600 100 10 1 square wave pulse duration (s) normalized transient thermal impedance z 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty = 0.5 1. duty cycle, d = 2. r thja = 104 c/w 3. t jm - t a = p cm x z thja t 1 t 2 t 1 t 2 4. surface mounted p cm thja x rthja v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.001 1 - drain current (a) i d 0.01 t a = 25 c single pulse 10 m s 100 m s dc 1 s 10 s li m ited by r ds(on) wpt2n31 6 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
application note and recommend layout 1. the greater exposed pad of bottom is conne cted to collector of transistor internally. 2. the smaller exposed pad of bottom is connected to drain of mosfet and base of transistor internally. 3. recommend layout as below: e e c c g s c d/b 1 1 m m m m t t e e s s t t p p o o i i n n t t p p i i n n 1 1 wpt2n31 7 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn2x2-6l dimensions in millimeters symbol min. typ. max. a 0.700 0.800 a1 0.000 0.050 a3 0.203 ref. d 1.924 2.000 2.076 e 1.924 2.000 2.076 d1 0.850 0.950 1.050 e1 0.700 0.800 0.900 d2 0.200 0.300 0.400 e2 0.700 0.800 0.900 e1 0.650 typ. e2 0.325 typ. k 0.200 min. b 0.250 0.300 0.350 e 0.650 typ. l 0.300 0.350 0.400 wpt2n31 8 of 8 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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